NVD5806N Todos los transistores

NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin

NVD5803N Power MOSFET 40 V, 85 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 40 V 5.7 mW @ 10 V 85 A Applications DC Motor Drive D Reverse Battery Protection G

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring