PHD10N10E Todos los transistores

 ..1. Size:60K  philips
 phd10n10e 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suuitable for VDS Drain-source voltage 100 V surface mounting. The device is ID Drain current (DC) 11 A intended for use in Switched Mode Ptot Total power dissipation

 9.1. Size:94K  philips
 phb108nq03lt phd108nq03lt phu108nq03lt.pdf

PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati

 9.2. Size:253K  philips
 phb108nq03lt phd108nq03lt php108nq03lt.pdf

PHP/PHB/PHD108NQ03LT TrenchMOS logic level FET Rev. 02 11 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatibl

 9.3. Size:773K  nxp
 phd101nq03lt.pdf

PHD101NQ03LT N-channel TrenchMOS logic level FET Rev. 5 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature