NVD5890NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVD5890NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 123 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 580 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm

Encapsulados: DPAK

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NVD5890NL datasheet

 ..1. Size:113K  onsemi
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NVD5890NL

NVD5890NL Power MOSFET 40 V, 3.7 mW, 123 A, Single N-Channel DPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com MSL 1 @ 260 C 100% Avalanche Tested V(BR)DSS RDS(ON) MAX ID MAX AEC Q101 Qualified and PPAP Capable 3.7 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 40 V 123 A Compliant 5.5 mW @ 4.5 V MAXIMUM RATI

 6.1. Size:116K  onsemi
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NVD5890NL

NVD5890N Power MOSFET 40 V, 123 A, Single N-Channel DPAK Features Low RDS(on) to Minimize Conduction Losses MSL 1/260 C http //onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 40 V 3.7 mW @ 10 V 123 A Applications Motor Drivers D Pump Drive

 6.2. Size:106K  onsemi
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NVD5890NL

NVD5890N Power MOSFET 40 V, 123 A, Single N-Channel DPAK Features Low RDS(on) to Minimize Conduction Losses MSL 1/260 C http //onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 40 V 3.7 mW @ 10 V 123 A Applications Motor Drivers D Pump Drive

 9.1. Size:135K  onsemi
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NVD5890NL

NVD5863NL Power MOSFET 60 V, 7.1 mW, 82 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 7.1 mW @ 10 V 60 V 82 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not

Otros transistores... NVD5117PL, NVD5414N, NVD5484NL, NVD5490NL, NVD5802N, NVD5805N, NVD5806N, NVD5807N, K2611, NVD5890NT4G, NVD6414AN, NVD6415AN, NVD6416AN, NVD6416ANL, NVD6495NL, NVD6820NL, NVD6824NL