NVD5890NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NVD5890NL
Маркировка: 5890NL
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 123 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 84 nC
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 580 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
Тип корпуса: DPAK
NVD5890NL Datasheet (PDF)
nvd5890nl.pdf
NVD5890NLPower MOSFET40 V, 3.7 mW, 123 A, Single N-ChannelDPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com MSL 1 @ 260C 100% Avalanche TestedV(BR)DSS RDS(ON) MAX ID MAX AEC Q101 Qualified and PPAP Capable3.7 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS40 V123 ACompliant5.5 mW @ 4.5 VMAXIMUM RATI
nvd5890n.pdf
NVD5890NPower MOSFET40 V, 123 A, Single N-Channel DPAKFeatures Low RDS(on) to Minimize Conduction Losses MSL 1/260Chttp://onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant40 V 3.7 mW @ 10 V 123 AApplications Motor DriversD Pump Drive
nvd5890nt4g.pdf
NVD5890NPower MOSFET40 V, 123 A, Single N-Channel DPAKFeatures Low RDS(on) to Minimize Conduction Losses MSL 1/260Chttp://onsemi.com AEC Q101 Qualified and PPAP Capable 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant40 V 3.7 mW @ 10 V 123 AApplications Motor DriversD Pump Drive
nvd5863nl.pdf
NVD5863NLPower MOSFET60 V, 7.1 mW, 82 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant7.1 mW @ 10 V60 V 82 AMAXIMUM RATINGS (TJ = 25C unless otherwise not
nvd5865nl.pdf
NVD5865NLPower MOSFET60 V, 46 A, 16 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 QualifiedV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS16 mW @ 10 VCompliant60 V 46 A19 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless oth
nvd5807n.pdf
NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight
nvd5805n.pdf
NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices
nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin
nvd5803n.pdf
NVD5803NPower MOSFET40 V, 85 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant40 V 5.7 mW @ 10 V 85 AApplications DC Motor DriveD Reverse Battery Protection G
ntd5802n nvd5802n.pdf
NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring
nvd5862n.pdf
NVD5862NPower MOSFET60 V, 5.7 mW, 98 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant60 V 5.7 mW @ 10 V 98 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted
nvd5867nl.pdf
NVD5867NLPower MOSFET60 V, 22 A, 39 mW, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capabilitywww.onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) ID These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS39 mW @ 10 VCompliant60 V 22 A50 mW @ 4.5 VMAXIMUM RATINGS (TJ =
nvd5806n.pdf
NTD5806N, NVD5806NPower MOSFET40 V, 33 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant26 mW @ 4.5 V40 V33 AApplications19 mW @ 10 V CCFL BacklightD
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
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