NVD6415AN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVD6415AN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: DPAK

 Búsqueda de reemplazo de NVD6415AN MOSFET

- Selecciónⓘ de transistores por parámetros

 

NVD6415AN datasheet

 ..1. Size:100K  onsemi
nvd6415an.pdf pdf_icon

NVD6415AN

NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring ID MAX V(BR)DSS RDS(on) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 100 V 55 mW @ 10 V 23 A These Devices

 0.1. Size:72K  onsemi
ntd6415anl nvd6415anl.pdf pdf_icon

NVD6415AN

NTD6415ANL, NVD6415ANL N-Channel Power MOSFET 100 V, 23 A, 56 mW, Logic Level Features Low RDS(on) www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 56 mW @ 4.5 V 100 V 23 A These Devices are Pb-Free and are RoHS

 8.1. Size:129K  onsemi
ntd6416an nvd6416an.pdf pdf_icon

NVD6415AN

NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

 8.2. Size:129K  onsemi
ntd6414an nvd6414an.pdf pdf_icon

NVD6415AN

NTD6414AN, NVD6414AN MOSFET Power, N-Channel 100 V, 32 A, 37 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 37 mW @ 10 V 32 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

Otros transistores... NVD5490NL, NVD5802N, NVD5805N, NVD5806N, NVD5807N, NVD5890NL, NVD5890NT4G, NVD6414AN, MMIS60R580P, NVD6416AN, NVD6416ANL, NVD6495NL, NVD6820NL, NVD6824NL, NVD6828NL, NVDD5894NL, NVE4153N