NVD6415AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD6415AN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
NVD6415AN Datasheet (PDF)
nvd6415an.pdf

NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXV(BR)DSS RDS(on) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable100 V 55 mW @ 10 V 23 A These Devices
ntd6415anl nvd6415anl.pdf

NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS
ntd6416an nvd6416an.pdf

NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
ntd6414an nvd6414an.pdf

NTD6414AN, NVD6414ANMOSFET Power,N-Channel100 V, 32 A, 37 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 37 mW @ 10 V 32 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SWF2N70D | WM02N08L | HGN035N08AL | CP650
History: SWF2N70D | WM02N08L | HGN035N08AL | CP650



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