NVD6416ANL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD6416ANL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 71 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
Paquete / Cubierta: DPAK
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NVD6416ANL Datasheet (PDF)
ntd6416anl nvd6416anl.pdf

NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-Free
nvd6416anl.pdf

NTD6416ANL, NVD6416ANLN-Channel Power MOSFET100 V, 19 A, 74 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101100 V 74 mW @ 10 V 19 AQualified and PPAP Capable These Devices are Pb-F
ntd6416an nvd6416an.pdf

NTD6416AN, NVD6416ANMOSFET Power,N-Channel100 V, 17 A, 81 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring100 V 81 mW @ 10 V 17 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable These De
nvd6416an.pdf

NTD6416AN, NVD6416ANN-Channel Power MOSFET100 V, 17 A, 81 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringID MAXUnique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(on) MAX (Note 1)Qualified and PPAP Capable100 V 81 mW @ 10 V 17 A These Devices a
Otros transistores... NVD5805N , NVD5806N , NVD5807N , NVD5890NL , NVD5890NT4G , NVD6414AN , NVD6415AN , NVD6416AN , AO3407 , NVD6495NL , NVD6820NL , NVD6824NL , NVD6828NL , NVDD5894NL , NVE4153N , NVF2201N , NVF2955 .
History: NTGS4111PT1 | NTMFS6B05N | BUK9Y12-100E | IRFR9120PBF | IRF7811AVTR | FDPF7N50 | TPA120R800A
History: NTGS4111PT1 | NTMFS6B05N | BUK9Y12-100E | IRFR9120PBF | IRF7811AVTR | FDPF7N50 | TPA120R800A



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