NVD6416ANL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVD6416ANL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm

Encapsulados: DPAK

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NVD6416ANL datasheet

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NVD6416ANL

NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 100 V 74 mW @ 10 V 19 A Qualified and PPAP Capable These Devices are Pb-Free

 ..2. Size:99K  onsemi
 nvd6416anl.pdf pdf_icon

NVD6416ANL

NTD6416ANL, NVD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested V(BR)DSS RDS(on) MAX ID MAX NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 100 V 74 mW @ 10 V 19 A Qualified and PPAP Capable These Devices are Pb-F

 5.1. Size:129K  onsemi
 ntd6416an nvd6416an.pdf pdf_icon

NVD6416ANL

NTD6416AN, NVD6416AN MOSFET Power, N-Channel 100 V, 17 A, 81 mW Features http //onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(on) MAX (Note 1) NVD Prefix for Automotive and Other Applications Requiring 100 V 81 mW @ 10 V 17 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These De

 5.2. Size:98K  onsemi
 nvd6416an.pdf pdf_icon

NVD6416ANL

NTD6416AN, NVD6416AN N-Channel Power MOSFET 100 V, 17 A, 81 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications Requiring ID MAX Unique Site and Control Change Requirements; AEC-Q101 V(BR)DSS RDS(on) MAX (Note 1) Qualified and PPAP Capable 100 V 81 mW @ 10 V 17 A These Devices a

MOSTRAR MÁS

Otros transistores... NVD5805N, NVD5806N, NVD5807N, NVD5890NL, NVD5890NT4G, NVD6414AN, NVD6415AN, NVD6416AN, IRF830, NVD6495NL, NVD6820NL, NVD6824NL, NVD6828NL, NVDD5894NL, NVE4153N, NVF2201N, NVF2955