NVD6820NL Todos los transistores

 

NVD6820NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVD6820NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 90 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 98 nS
   Cossⓘ - Capacitancia de salida: 253 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0167 Ohm
   Paquete / Cubierta: DPAK

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NVD6820NL Datasheet (PDF)

 ..1. Size:103K  onsemi
nvd6820nl.pdf

NVD6820NL
NVD6820NL

NVD6820NLPower MOSFET90 V, 17 mW, 50 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant16.7 mW @ 10 V90 V 50 AMAXIMUM RATINGS (TJ = 25C unl

 8.1. Size:104K  onsemi
nvd6824nl.pdf

NVD6820NL
NVD6820NL

NVD6824NLPower MOSFET100 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V100 V 41 AMAXIMUM RATINGS (TJ = 25C unless otherwise not

 8.2. Size:103K  onsemi
nvd6828nl.pdf

NVD6820NL
NVD6820NL

NVD6828NLPower MOSFET90 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V90 V 41 AMAXIMUM RATINGS (TJ = 25C unles

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