NVD6820NL Datasheet. Specs and Replacement

Type Designator: NVD6820NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 253 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0167 Ohm

Package: DPAK

NVD6820NL substitution

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NVD6820NL datasheet

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NVD6820NL

NVD6820NL Power MOSFET 90 V, 17 mW, 50 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 16.7 mW @ 10 V 90 V 50 A MAXIMUM RATINGS (TJ = 25 C unl... See More ⇒

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NVD6820NL

NVD6824NL Power MOSFET 100 V, 20 mW, 41 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 20 mW @ 10 V 100 V 41 A MAXIMUM RATINGS (TJ = 25 C unless otherwise not... See More ⇒

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NVD6820NL

NVD6828NL Power MOSFET 90 V, 20 mW, 41 A, Single N-Channel Features Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified http //onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) ID Compliant 20 mW @ 10 V 90 V 41 A MAXIMUM RATINGS (TJ = 25 C unles... See More ⇒

Detailed specifications: NVD5807N, NVD5890NL, NVD5890NT4G, NVD6414AN, NVD6415AN, NVD6416AN, NVD6416ANL, NVD6495NL, IRFP064N, NVD6824NL, NVD6828NL, NVDD5894NL, NVE4153N, NVF2201N, NVF2955, NVF3055-100, NVF3055L108

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