NVD6820NL Datasheet and Replacement
Type Designator: NVD6820NL
Marking Code: 6820L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 44 nC
tr ⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 253 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0167 Ohm
Package: DPAK
NVD6820NL substitution
NVD6820NL Datasheet (PDF)
nvd6820nl.pdf

NVD6820NLPower MOSFET90 V, 17 mW, 50 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant16.7 mW @ 10 V90 V 50 AMAXIMUM RATINGS (TJ = 25C unl
nvd6824nl.pdf

NVD6824NLPower MOSFET100 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V100 V 41 AMAXIMUM RATINGS (TJ = 25C unless otherwise not
nvd6828nl.pdf

NVD6828NLPower MOSFET90 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V90 V 41 AMAXIMUM RATINGS (TJ = 25C unles
Datasheet: NVD5807N , NVD5890NL , NVD5890NT4G , NVD6414AN , NVD6415AN , NVD6416AN , NVD6416ANL , NVD6495NL , 5N50 , NVD6824NL , NVD6828NL , NVDD5894NL , NVE4153N , NVF2201N , NVF2955 , NVF3055-100 , NVF3055L108 .
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