NVD6820NL
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVD6820NL
Marking Code: 6820L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 98
nS
Cossⓘ -
Output Capacitance: 253
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0167
Ohm
Package:
DPAK
NVD6820NL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVD6820NL
Datasheet (PDF)
..1. Size:103K onsemi
nvd6820nl.pdf
NVD6820NLPower MOSFET90 V, 17 mW, 50 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant16.7 mW @ 10 V90 V 50 AMAXIMUM RATINGS (TJ = 25C unl
8.1. Size:104K onsemi
nvd6824nl.pdf
NVD6824NLPower MOSFET100 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V100 V 41 AMAXIMUM RATINGS (TJ = 25C unless otherwise not
8.2. Size:103K onsemi
nvd6828nl.pdf
NVD6828NLPower MOSFET90 V, 20 mW, 41 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specifiedhttp://onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) IDCompliant20 mW @ 10 V90 V 41 AMAXIMUM RATINGS (TJ = 25C unles
Datasheet: WPB4002
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