NVF3055L108 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVF3055L108  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 112 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT-223

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NVF3055L108 datasheet

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 nvf3055l108.pdf pdf_icon

NVF3055L108

NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N-Channel SOT-223 Designed for low voltage, high speed switching applications in power http //onsemi.com supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V Features RDS(on) = 120 mW NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

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NVF3055L108

NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 110 mW Features N-Channel AEC-Q101 Qualified and PPAP Capable - NVF3055-100 D These Devices are Pb-Free and are RoHS Compli

 7.2. Size:203K  onsemi
 ntf3055-100 nvf3055-100.pdf pdf_icon

NVF3055L108

NTF3055-100, NVF3055-100 MOSFET Power, N-Channel, SOT-223 3.0 A, 60 V www.onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 110 mW Features NVF Prefix for Automotive and Other Applications Requiring N-Channel Unique Site and Control Change Requirements; AE

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