All MOSFET. NVF3055L108 Datasheet

 

NVF3055L108 MOSFET. Datasheet pdf. Equivalent

Type Designator: NVF3055L108

SMD Transistor Code: 3055L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 15 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 7.6 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 112 pF

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: SOT-223

NVF3055L108 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NVF3055L108 Datasheet (PDF)

1.1. nvf3055l108.pdf Size:69K _update_mosfet

NVF3055L108
NVF3055L108

NTF3055L108, NVF3055L108 Power MOSFET 3.0 A, 60 V, Logic Level, N-Channel SOT-223 Designed for low voltage, high speed switching applications in power http://onsemi.com supplies, converters and power motor controls and bridge circuits. 3.0 A, 60 V Features RDS(on) = 120 mW • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

3.1. nvf3055-100.pdf Size:103K _update_mosfet

NVF3055L108
NVF3055L108

NTF3055-100, NVF3055-100 Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 3.0 A, 60 V circuits. RDS(on) = 110 mW Features N-Channel • AEC-Q101 Qualified and PPAP Capable - NVF3055-100 D • These Devices are Pb-Free and are RoHS Compli

 

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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