NVGS3130N Todos los transistores

 

NVGS3130N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVGS3130N

Código: VS9

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 5.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.4 V

Carga de compuerta (Qg): 13.2 nC

Tiempo de elevación (tr): 7.3 nS

Conductancia de drenaje-sustrato (Cd): 169 pF

Resistencia drenaje-fuente RDS(on): 0.024 Ohm

Empaquetado / Estuche: TSOP-6

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NVGS3130N Datasheet (PDF)

1.1. nvgs3130n.pdf Size:110K _update_mosfet

NVGS3130N
NVGS3130N

NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance http://onsemi.com • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 24 mW @ 4.5 V 5.6 A Site and Control Change Requir

3.1. nvgs3136p.pdf Size:68K _update_mosfet

NVGS3130N
NVGS3130N

NTGS3136P, NVGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features • Low RDS(on) in TSOP-6 Package • 1.8 V Gate Rating www.onsemi.com • Fast Switching • NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) TYP ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 25 mW @ -4.5 V -5.1 A PPAP Capable -20 V 32 mW @ -2.5

 5.1. nvgs3441.pdf Size:100K _update_mosfet

NVGS3130N
NVGS3130N

NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P-Channel TSOP-6 Features • Ultra Low RDS(on) http://onsemi.com • Higher Efficiency Extending Battery Life • Miniature TSOP-6 Surface Mount Package 1 AMPERE • NV Prefix for Automotive and Other Applications Requiring Unique 20 VOLTS Site and Control Change Requirements; AEC-Q101 Qualified and RDS(on) = 90 mW PPAP Capable •

5.2. nvgs3443.pdf Size:101K _update_mosfet

NVGS3130N
NVGS3130N

NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts P-Channel TSOP-6 http://onsemi.com Features • Ultra Low RDS(on) 4.4 AMPERES • Higher Efficiency Extending Battery Life 20 VOLTS • Miniature TSOP-6 Surface Mount Package RDS(on) = 65 mW • These Devices are Pb-Free and are RoHS Compliant • NVGS Prefix for Automotive and Other Applications Requiring P-Channel Unique Site a

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