NVGS3130N Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NVGS3130N
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 7.3 ns
Cossⓘ - Выходная емкость: 169 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: TSOP-6
Аналог (замена) для NVGS3130N
NVGS3130N Datasheet (PDF)
nvgs3130n.pdf

NTGS3130N, NVGS3130NPower MOSFET20 V, 5.6 A SingleN-Channel, TSOP-6Features Leading Edge Trench Technology for Low On Resistancehttp://onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 PackageV(BR)DSS RDS(on) mAX ID Max NV Prefix for Automotive and Other Applications Requiring Unique24 mW @ 4.5 V 5.6 ASite and Control Change Requir
nvgs3136p.pdf

NTGS3136P, NVGS3136PPower MOSFET-20 V, -5.8 A, Single P-Channel, TSOP-6Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Ratingwww.onsemi.com Fast Switching NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) TYP ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and25 mW @ -4.5 V -5.1 APPAP Capable-20 V 32 mW @ -2.5
ntgs3136p nvgs3136p.pdf

NTGS3136P, NVGS3136PMOSFET Power, Single,P-Channel, TSOP-6-20 V, -5.8 AFeatureswww.onsemi.com Low RDS(on) in TSOP-6 Package 1.8 V Gate RatingV(BR)DSS RDS(ON) TYP ID MAX Fast Switching25 mW @ -4.5 V -5.1 A NV Prefix for Automotive and Other Applications Requiring Unique-20 V 32 mW @ -2.5 V -4.5 ASite and Control Change Requirements; AEC-Q101 Qualified an
ntgs3441t1 nvgs3441.pdf

NTGS3441, NVGS3441Power MOSFET1 Amp, 20 Volts, P-Channel TSOP-6Features Ultra Low RDS(on)http://onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique20 VOLTSSite and Control Change Requirements; AEC-Q101 Qualified andRDS(on) = 90 mWPPAP Capable
Другие MOSFET... NVDD5894NL , NVE4153N , NVF2201N , NVF2955 , NVF3055-100 , NVF3055L108 , NVF5P03 , NVF6P02 , IRF640 , NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , NVJD4152P , NVJD4158C .
History: IXTH36N50P | FDP8N50NZU | NTMFS4939NT1G | AP9435GP-HF | RS1G120MN | CS10N60A8HD | TPB70R950C
History: IXTH36N50P | FDP8N50NZU | NTMFS4939NT1G | AP9435GP-HF | RS1G120MN | CS10N60A8HD | TPB70R950C



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
c2078 transistor | 2sc458 transistors | 2sa992 | 2sa970 | a970 | d2390 transistor | 2n5087 equivalent | tip147 datasheet