NVGS3136P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVGS3136P 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 5.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 274 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Encapsulados: TSOP-6
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NVGS3136P datasheet
nvgs3136p.pdf
NTGS3136P, NVGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating www.onsemi.com Fast Switching NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) TYP ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 25 mW @ -4.5 V -5.1 A PPAP Capable -20 V 32 mW @ -2.5
ntgs3136p nvgs3136p.pdf
NTGS3136P, NVGS3136P MOSFET Power, Single, P-Channel, TSOP-6 -20 V, -5.8 A Features www.onsemi.com Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating V(BR)DSS RDS(ON) TYP ID MAX Fast Switching 25 mW @ -4.5 V -5.1 A NV Prefix for Automotive and Other Applications Requiring Unique -20 V 32 mW @ -2.5 V -4.5 A Site and Control Change Requirements; AEC-Q101 Qualified an
nvgs3130n.pdf
NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features Leading Edge Trench Technology for Low On Resistance http //onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max NV Prefix for Automotive and Other Applications Requiring Unique 24 mW @ 4.5 V 5.6 A Site and Control Change Requir
ntgs3441t1 nvgs3441.pdf
NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, P-Channel TSOP-6 Features Ultra Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package 1 AMPERE NV Prefix for Automotive and Other Applications Requiring Unique 20 VOLTS Site and Control Change Requirements; AEC-Q101 Qualified and RDS(on) = 90 mW PPAP Capable
Otros transistores... NVE4153N, NVF2201N, NVF2955, NVF3055-100, NVF3055L108, NVF5P03, NVF6P02, NVGS3130N, IRFB4110, NVGS3441, NVGS3443, NVGS4111P, NVGS4141N, NVGS5120P, NVJD4152P, NVJD4158C, NVJD4401N
Parámetros del MOSFET. Cómo se afectan entre sí.
History: HGP220N25S | FDD86369F085 | APG130N06T | JMTG018N03A | PSMN9R8-30MLC
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