All MOSFET. NVGS3136P Datasheet

 

NVGS3136P MOSFET. Datasheet pdf. Equivalent

Type Designator: NVGS3136P

Marking Code: VSD

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 5.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 274 pF

Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm

Package: TSOP-6

NVGS3136P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVGS3136P Datasheet (PDF)

1.1. nvgs3136p.pdf Size:68K _update_mosfet

NVGS3136P
NVGS3136P

NTGS3136P, NVGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features • Low RDS(on) in TSOP-6 Package • 1.8 V Gate Rating www.onsemi.com • Fast Switching • NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) TYP ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 25 mW @ -4.5 V -5.1 A PPAP Capable -20 V 32 mW @ -2.5

1.2. nvgs3136p.pdf Size:68K _onsemi

NVGS3136P
NVGS3136P

NTGS3136P, NVGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features • Low RDS(on) in TSOP-6 Package • 1.8 V Gate Rating www.onsemi.com • Fast Switching • NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(ON) TYP ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 25 mW @ -4.5 V -5.1 A PPAP Capable -20 V 32 mW @ -2.5

 3.1. nvgs3130n.pdf Size:110K _update_mosfet

NVGS3136P
NVGS3136P

NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance http://onsemi.com • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 24 mW @ 4.5 V 5.6 A Site and Control Change Requir

3.2. nvgs3130n.pdf Size:110K _onsemi

NVGS3136P
NVGS3136P

NTGS3130N, NVGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance http://onsemi.com • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 24 mW @ 4.5 V 5.6 A Site and Control Change Requir

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
Back to Top