NVMFD5873NL Todos los transistores

 

NVMFD5873NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVMFD5873NL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: DFN8
 

 Búsqueda de reemplazo de NVMFD5873NL MOSFET

   - Selección ⓘ de transistores por parámetros

 

NVMFD5873NL Datasheet (PDF)

 ..1. Size:76K  onsemi
nvmfd5873nl.pdf pdf_icon

NVMFD5873NL

NVMFD5873NLPower MOSFET60 V, 13 mW, 58 A, Dual N-Channel LogicLevel, Dual SO-8FLFeatures Small Footprint (5x6 mm) for Compact Designshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVMFD5873NLWF - Wettable Flanks Option for Enhanced Optical13 mW @ 10 VInspection60 V 58 A16.5

 6.1. Size:199K  onsemi
nvmfd5877nl.pdf pdf_icon

NVMFD5873NL

NVMFD5877NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 39 mW, 17 Ahttp://onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses39 mW @ 10 V NVMFD5877NLWF - Wettable Flanks Option for Enhanced Optical60 V 17 AInspection60 mW @ 4.5 V AEC-Q101 Qualified and PPAP Cap

 6.2. Size:201K  onsemi
nvmfd5875nl.pdf pdf_icon

NVMFD5873NL

NVMFD5875NLMOSFET Power, DualN-Channel, Logic Level,Dual SO8FL60 V, 33 mW, 22 Awww.onsemi.comFeatures Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses33 mW @ 10 V NVMFD5875NLWF - Wettable Flanks Option for Enhanced Optical60 V 22 A45 mW @ 4.5 VInspection AEC-Q101 Qualified and PPAP Capabl

 7.1. Size:120K  onsemi
nvmfd5853n.pdf pdf_icon

NVMFD5873NL

NVMFD5853N,NVMFD5853NWFPower MOSFET40 V, 10 mW, 53 A, Dual N-Channel, DualSO-8FLFeatureshttp://onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

Otros transistores... NVMD6N03R2G , NVMD6N04 , NVMFD5483NL , NVMFD5485NL , NVMFD5489NL , NVMFD5852NL , NVMFD5853N , NVMFD5853NL , IRF4905 , NVMFS4C01N , NVMFS4C03N , NVMFS4C05N , NVMFS5113PL , NVMFS5826NL , NVMFS5830NL , NVMFS5832NL , NVMFS5833N .

History: QM3004N3 | STN4826 | BRI2N70

 

 
Back to Top

 


 
.