NVMFS4C01N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFS4C01N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.84 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 5073 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0009 Ohm

Encapsulados: SO-8FL

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NVMFS4C01N datasheet

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NVMFS4C01N

NVMFS4C01N Power MOSFET 30 V, 0.9 mW, 319 A, Single N-Channel, Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS4C01NWF - Wettable Flanks Option for Enhanced Optical 0.9 mW @ 10 V Inspection 30 V 319 A

 6.1. Size:70K  onsemi
 nvmfs4c05n.pdf pdf_icon

NVMFS4C01N

NVMFS4C05N Power MOSFET 30 V, 116 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com NVMFS4C05NWF - Wettable Flanks Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 3.4 mW

 6.2. Size:74K  onsemi
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NVMFS4C01N

NVMFS4C03N Power MOSFET 30 V, 2.1 mW, 143 A, Single N-Channel Logic Level, SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low QG and Capacitance to Minimize Driver Losses 2.1 mW @ 10 V 30 V NVMFS4C03NWF - Wettable Flanks Option for Enhanced Optical 143 A 2.8 mW @ 4.5

 7.1. Size:119K  onsemi
 nvmfs4c302n.pdf pdf_icon

NVMFS4C01N

NVMFS4C302N Power MOSFET 30 V, 1.15 mW, 241 A, Single N-Channel Logic Level, SO-8FL Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFS4C302NWF - Wettable Flanks Option for Enhanced Optical 1.15 mW @ 10 V Inspection 30 V 241 A

MOSTRAR MÁS

Otros transistores... NVMD6N04, NVMFD5483NL, NVMFD5485NL, NVMFD5489NL, NVMFD5852NL, NVMFD5853N, NVMFD5853NL, NVMFD5873NL, IRLB4132, NVMFS4C03N, NVMFS4C05N, NVMFS5113PL, NVMFS5826NL, NVMFS5830NL, NVMFS5832NL, NVMFS5833N, NVMFS5834NL