PHD3N40E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHD3N40E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm

Encapsulados: SOT428

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PHD3N40E datasheet

 ..1. Size:103K  philips
php3n40e phb3n40e phd3n40e.pdf pdf_icon

PHD3N40E

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

 9.1. Size:56K  philips
phd3n20l 1.pdf pdf_icon

PHD3N40E

Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mounting featuring high avalanche ID Drain current (DC) 3.5 A energy capability, stab

 9.2. Size:56K  philips
phd3n20e 1.pdf pdf_icon

PHD3N40E

Philips Semiconductors Product specification PowerMOS transistor PHD3N20E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mounting featuring high avalanche ID Drain current (DC) 3.5 A energy capability, stable blocking Ptot Total power d

Otros transistores... PHB8N50E, PHB8ND50E, PHB9N60E, PHD10N10E, PHD12N10E, PHD2N50E, PHD2N60E, PHD3055E, STP80NF70, PHD45N03LT, PHD50N03LT, PHD55N03LT, PHD69N03LT, PHD6N10E, PHP10N10E, PHP10N60E, PHP11N50E