PHD3N40E Datasheet and Replacement. Cross Reference Search

PHD3N40E Datasheet (PDF)

..1. Size:103K philips
php3n40e phb3n40e phd3n40e.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch

9.1. Size:56K philips
phd3n20l 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 3.5 Aenergy capability, stab

9.2. Size:56K philips
phd3n20e 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor PHD3N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 3.5 Aenergy capability, stable blocking Ptot Total power d

Datasheet: PHB8N50E , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , 20N50 , PHD45N03LT , PHD50N03LT , PHD55N03LT , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E .