PHD3N40E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHD3N40E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5
Ohm
Package: SOT428
PHD3N40E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHD3N40E
Datasheet (PDF)
..1. Size:103K philips
php3n40e phb3n40e phd3n40e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch
9.1. Size:56K philips
phd3n20l 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHD3N20L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 3.5 Aenergy capability, stab
9.2. Size:56K philips
phd3n20e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHD3N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 200 Vmounting featuring high avalanche ID Drain current (DC) 3.5 Aenergy capability, stable blocking Ptot Total power d
Datasheet: PHB8N50E
, PHB8ND50E
, PHB9N60E
, PHD10N10E
, PHD12N10E
, PHD2N50E
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.