NX7002AKS Todos los transistores

 

NX7002AKS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX7002AKS
   Código: TD*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 0.33 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 3.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TSSOP6

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NX7002AKS Datasheet (PDF)

 ..1. Size:860K  nxp
nx7002aks.pdf

NX7002AKS
NX7002AKS

NX7002AKS60 V, dual N-channel Trench MOSFETRev. 1 1 March 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection Trench MOSF

 6.1. Size:202K  nxp
nx7002ak.pdf

NX7002AKS
NX7002AKS

NX7002AK60 V, single N-channel Trench MOSFET10 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 A

 6.2. Size:236K  nxp
nx7002aka.pdf

NX7002AKS
NX7002AKS

NX7002AKA60 V, single N-channel Trench MOSFET18 February 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified

 6.3. Size:200K  nxp
nx7002akw.pdf

NX7002AKS
NX7002AKS

NX7002AKW60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 App

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