Справочник MOSFET. NX7002AKS

 

NX7002AKS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NX7002AKS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.22 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 3.4 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: TSSOP6
     - подбор MOSFET транзистора по параметрам

 

NX7002AKS Datasheet (PDF)

 ..1. Size:860K  nxp
nx7002aks.pdfpdf_icon

NX7002AKS

NX7002AKS60 V, dual N-channel Trench MOSFETRev. 1 1 March 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection Trench MOSF

 6.1. Size:202K  nxp
nx7002ak.pdfpdf_icon

NX7002AKS

NX7002AK60 V, single N-channel Trench MOSFET10 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 A

 6.2. Size:236K  nxp
nx7002aka.pdfpdf_icon

NX7002AKS

NX7002AKA60 V, single N-channel Trench MOSFET18 February 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified

 6.3. Size:200K  nxp
nx7002akw.pdfpdf_icon

NX7002AKS

NX7002AKW60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 App

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BUZ24 | SI4435DY-T1-E3 | IRC330 | R6524KNX | IRF9530P | FDU6512A | SI2301ADS-T1

 

 
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