NX7002AKW Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX7002AKW  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 3.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: SC-70

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NX7002AKW datasheet

 ..1. Size:200K  nxp
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NX7002AKW

NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected 1.3 App

 6.1. Size:202K  nxp
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NX7002AKW

NX7002AK 60 V, single N-channel Trench MOSFET 10 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected 1.3 A

 6.2. Size:860K  nxp
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NX7002AKW

NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection Trench MOSF

 6.3. Size:236K  nxp
 nx7002aka.pdf pdf_icon

NX7002AKW

NX7002AKA 60 V, single N-channel Trench MOSFET 18 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified

MOSTRAR MÁS

Otros transistores... NVTR4502P, NVTR4503N, NX1029X, NX2020N2, NX2020P1, NX3020NAK, NX7002AK, NX7002AKS, 7N60, NX7002BK, NX7002BKM, NX7002BKMB, NX7002BKS, NX7002BKW, NX7002BKXB, OM6005SC, OM6027SC