NX7002AKW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NX7002AKW
Código: AH*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.22 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 VQgⓘ - Carga de la puerta: 0.33 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 3.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Paquete / Cubierta: SC-70
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NX7002AKW Datasheet (PDF)
nx7002akw.pdf
NX7002AKW60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 App
nx7002ak.pdf
NX7002AK60 V, single N-channel Trench MOSFET10 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 A
nx7002aks.pdf
NX7002AKS60 V, dual N-channel Trench MOSFETRev. 1 1 March 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection Trench MOSF
nx7002aka.pdf
NX7002AKA60 V, single N-channel Trench MOSFET18 February 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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