All MOSFET. NX7002AKW Datasheet

 

NX7002AKW Datasheet and Replacement


   Type Designator: NX7002AKW
   Marking Code: AH*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 0.17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 0.33 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 3.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: SC-70
 

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NX7002AKW Datasheet (PDF)

 ..1. Size:200K  nxp
 nx7002akw.pdf pdf_icon

NX7002AKW

NX7002AKW60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 App

 6.1. Size:202K  nxp
 nx7002ak.pdf pdf_icon

NX7002AKW

NX7002AK60 V, single N-channel Trench MOSFET10 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 A

 6.2. Size:860K  nxp
 nx7002aks.pdf pdf_icon

NX7002AKW

NX7002AKS60 V, dual N-channel Trench MOSFETRev. 1 1 March 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection Trench MOSF

 6.3. Size:236K  nxp
 nx7002aka.pdf pdf_icon

NX7002AKW

NX7002AKA60 V, single N-channel Trench MOSFET18 February 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified

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Datasheet: NVTR4502P , NVTR4503N , NX1029X , NX2020N2 , NX2020P1 , NX3020NAK , NX7002AK , NX7002AKS , MMIS60R580P , NX7002BK , NX7002BKM , NX7002BKMB , NX7002BKS , NX7002BKW , NX7002BKXB , OM6005SC , OM6027SC .

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