NX7002AKW
MOSFET. Datasheet pdf. Equivalent
Type Designator: NX7002AKW
Marking Code: AH*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.22
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1
V
|Id|ⓘ - Maximum Drain Current: 0.17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.33
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 3.4
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5
Ohm
Package:
SC-70
NX7002AKW
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NX7002AKW
Datasheet (PDF)
..1. Size:200K nxp
nx7002akw.pdf
NX7002AKW60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 App
6.1. Size:202K nxp
nx7002ak.pdf
NX7002AK60 V, single N-channel Trench MOSFET10 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 A
6.2. Size:860K nxp
nx7002aks.pdf
NX7002AKS60 V, dual N-channel Trench MOSFETRev. 1 1 March 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection Trench MOSF
6.3. Size:236K nxp
nx7002aka.pdf
NX7002AKA60 V, single N-channel Trench MOSFET18 February 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified
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