NX7002BK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NX7002BK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.3 nS
   Cossⓘ - Capacitancia de salida: 4.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO-236AB

Búsqueda de reemplazo de MOSFET NX7002BK

NX7002BK Datasheet (PDF)

..1. Size:266K nxp
nx7002bk.pdf

NX7002BK60 V, N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharg

0.1. Size:234K nxp
nx7002bkmb.pdf

NX7002BKMB60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

0.2. Size:263K nxp
nx7002bkw.pdf

NX7002BKW60 V, single N-channel Trench MOSFET20 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt

0.3. Size:235K nxp
nx7002bkm.pdf

NX7002BKM60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

0.4. Size:294K nxp
nx7002bks.pdf

NX7002BKS60 V, dual N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS

0.5. Size:257K nxp
nx7002bkxb.pdf

NX7002BKXB60 V, dual N-channel Trench MOSFET30 June 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plast

0.6. Size:269K nxp
nx7002bkh.pdf

NX7002BKH60 V, N-channel Trench MOSFET12 March 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology El

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