NX7002BK Datasheet. Specs and Replacement
Type Designator: NX7002BK 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.3 nS
Cossⓘ - Output Capacitance: 4.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-236AB
NX7002BK substitution
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NX7002BK datasheet
nx7002bk.pdf
NX7002BK 60 V, N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharg... See More ⇒
nx7002bkw.pdf
NX7002BKW 60 V, single N-channel Trench MOSFET 20 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt... See More ⇒
nx7002bkm.pdf
NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ... See More ⇒
Detailed specifications: NVTR4503N, NX1029X, NX2020N2, NX2020P1, NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW, IRFZ48N, NX7002BKM, NX7002BKMB, NX7002BKS, NX7002BKW, NX7002BKXB, OM6005SC, OM6027SC, OM60N10SC
Keywords - NX7002BK MOSFET specs
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