P55NF06 Todos los transistores

 

P55NF06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P55NF06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 120 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 50 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 100 nS
   Conductancia de drenaje-sustrato (Cd): 430 pF
   Resistencia entre drenaje y fuente RDS(on): 0.023 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET P55NF06

 

P55NF06 Datasheet (PDF)

 ..1. Size:279K  thinkisemi
d55nf06 f55nf06 p55nf06 u55nf06.pdf

P55NF06 P55NF06

55NF06Pb55NF06Pb Free Plating ProductN-CHANNEL POWER MOSFET TRANSISTOR50 AMPERE 60 VOLTN-CHANNEL POWER MOSFET12TO-251/IPAK3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12threshold voltages of 4 volt. TO-

 0.1. Size:541K  st
stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf

P55NF06 P55NF06

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V

 0.2. Size:793K  st
stb55nf06t4 stp55nf06fp.pdf

P55NF06 P55NF06

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V

 0.3. Size:454K  st
stp55nf06l.pdf

P55NF06 P55NF06

STP55NF06L - STP55NF06LFPSTB55NF06L - STB55NF06L-1N-CHANNEL 60V - 0.014 - 55A TO-220/FP/D2PAK/I2PAKSTripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP55NF06L 60 V

 0.4. Size:793K  st
stb55nf06 stp55nf06 stp55nf06fp.pdf

P55NF06 P55NF06

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V

 0.5. Size:332K  st
stp55nf06l stb55nf06l stb55nf06l-1.pdf

P55NF06 P55NF06

STP55NF06LSTB55NF06L - STB55NF06L-1N-channel 60V - 0.014 - 55A TO-220/D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP55NF06L 60V

 0.6. Size:335K  st
stb55nf06l-1 stb55nf06lt4 stb55nf06l stb55nf06l-1 stp55nf06l.pdf

P55NF06 P55NF06

STP55NF06LSTB55NF06L - STB55NF06L-1N-channel 60V - 0.014 - 55A TO-220/D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP55NF06L 60V

 0.7. Size:204K  inchange semiconductor
stp55nf06.pdf

P55NF06 P55NF06

INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP55NF06DESCRIPTIONWith TO-220F packaging100% avalanche testedFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlAudio amplifiersDC-DC&DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sou

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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