P55NF06 Datasheet and Replacement
Type Designator: P55NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 30 nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-220
P55NF06 substitution
P55NF06 Datasheet (PDF)
d55nf06 f55nf06 p55nf06 u55nf06.pdf

55NF06Pb55NF06Pb Free Plating ProductN-CHANNEL POWER MOSFET TRANSISTOR50 AMPERE 60 VOLTN-CHANNEL POWER MOSFET12TO-251/IPAK3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12threshold voltages of 4 volt. TO-
stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V
stb55nf06t4 stp55nf06fp.pdf

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V
stp55nf06l.pdf

STP55NF06L - STP55NF06LFPSTB55NF06L - STB55NF06L-1N-CHANNEL 60V - 0.014 - 55A TO-220/FP/D2PAK/I2PAKSTripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP55NF06L 60 V
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IRF630
Keywords - P55NF06 MOSFET datasheet
P55NF06 cross reference
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History: IRF630



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