PHP10N10E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 11 APower Supplies (SMPS), motor Ptot Total power dissipation 6

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 10.7 Ablocking voltage, fast switching and Ptot Total power di

Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 9.6 Ag Low thermal resistanceRDS(ON) 0.75 sGENERAL DESCRIPTION PINNING SOT78 (TO22

DISCRETE SEMICONDUCTORSDATA SHEETPHP109P-channel enhancement modeMOS transistor1997 Jun 18Product specificationSupersedes data of 1996 Jun 11File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modePHP109MOS transistorFEATURES PINNING - SO8 (SOT96-1) High-speed switchingPIN SYMBOL DESCRIPTION No seconda

PHP/PHB/PHD108NQ03LTTrenchMOS logic level FETRev. 02 11 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP108NQ03LT in SOT78 (TO-220AB)PHB108NQ03LT in SOT404 (D2-PAK)PHD108NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatibl

DISCRETE SEMICONDUCTORSDATA SHEETPHP1035P-channel enhancement modeMOS transistorPreliminary specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Preliminary specificationP-channel enhancement modePHP1035MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSonPIN SYMBOL DESCRIPTION High-speed switching1 s source N

PHP/PHB101NQ04TN-channel TrenchMOS standard level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-

PHP/PHU101NQ03LTTrenchMOS logic level FETRev. 02 25 February 2003 Product data1. DescriptionN-channel logic level field-effect power transistor in a plastic package usingTrenchMOS technology.Product availability:PHP101NQ03LT in SOT78 (TO-220AB)PHU101NQ03LT in SOT533 (I-PAK).2. Features Low gate charge Low on-state resistance.3. Applications Optimized as a con

DISCRETE SEMICONDUCTORSDATA SHEETPHP1025P-channel enhancement modeMOS transistorObjective specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationP-channel enhancement modePHP1025MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low thresholdPIN SYMBOL DESCRIPTION High-speed switching1 s

PHP101NQ04TN-channel TrenchMOS standard level FETRev. 02 5 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat