All MOSFET. PHP10N10E Equivalents Search

Philips Semiconductors Product Specification PowerMOS transistor PHP10N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. The device is VDS Drain-source voltage 100 V intended for use in Switched Mode ID Drain current (DC) 11 A Power Supplies (SMPS), motor Ptot Total power dissipation 6... See More ⇒

Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 10.7 A blocking voltage, fast switching and Ptot Total power di... See More ⇒

Philips Semiconductors Preliminary specification PowerMOS transistors PHP10N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 9.6 A g Low thermal resistance RDS(ON) 0.75 s GENERAL DESCRIPTION PINNING SOT78 (TO22... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET PHP109 P-channel enhancement mode MOS transistor 1997 Jun 18 Product specification Supersedes data of 1996 Jun 11 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode PHP109 MOS transistor FEATURES PINNING - SO8 (SOT96-1) High-speed switching PIN SYMBOL DESCRIPTION No seconda... See More ⇒

PHP/PHB/PHD108NQ03LT TrenchMOS logic level FET Rev. 02 11 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatibl... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification 1998 Feb 18 File under Discrete Semiconductors, SC13b Philips Semiconductors Preliminary specification P-channel enhancement mode PHP1035 MOS transistor FEATURES PINNING - SOT96-1 (SO8) Very low RDSon PIN SYMBOL DESCRIPTION High-speed switching 1 s source N... See More ⇒

PHP/PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 01 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-... See More ⇒

PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PHP101NQ03LT in SOT78 (TO-220AB) PHU101NQ03LT in SOT533 (I-PAK). 2. Features Low gate charge Low on-state resistance. 3. Applications Optimized as a con... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification 1998 Feb 18 File under Discrete Semiconductors, SC13b Philips Semiconductors Objective specification P-channel enhancement mode PHP1025 MOS transistor FEATURES PINNING - SOT96-1 (SO8) Very low RDSon at low threshold PIN SYMBOL DESCRIPTION High-speed switching 1 s ... See More ⇒

PHP101NQ04T N-channel TrenchMOS standard level FET Rev. 02 5 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat... See More ⇒