PH1825AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH1825AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 104 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Paquete / Cubierta: LFPAK
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PH1825AL Datasheet (PDF)
ph1825al.pdf

PH1825ALN-channel TrenchMOS logic level FETRev. 01 22 April 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and
ph1825al.pdf

PH1825ALN-channel TrenchMOS logic level FETRev. 01 22 April 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and
Otros transistores... PDNM6UT20V05 , PDNM8TP20V6E , PDNM8TP20V7E , PDPM6N20V3 , PH1225AL , PH1330AL , PH16030L , PH1730AL , IRF3710 , PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL .
History: SSF20NS65F | F5N65C | IRF3315L | PH1875L | QM06N65F | MCG40N03
History: SSF20NS65F | F5N65C | IRF3315L | PH1875L | QM06N65F | MCG40N03



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