PHP125N06LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHP125N06LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: SOT78

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PHP125N06LT Datasheet (PDF)

..1. Size:58K philips
php125n06lt 4.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V)g Low thermal resistance

5.1. Size:51K philips
php125n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP125N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state

8.1. Size:85K philips
php125 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPHP125P-channel enhancement modeMOS transistor1997 Jun 18Product specificationSupersedes data of 1996 Apr 02File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modePHP125MOS transistorFEATURES DESCRIPTION High-speed switching P-channel enhancement mode MOS transistor in an 8-p

9.1. Size:96K philips
php129nq04lt phb129nq04lt.pdf

PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC

9.2. Size:114K philips
phb12nq15t phd12nq15t php12nq15t 1.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in

9.3. Size:94K philips
phb129nq04lt php129nq04lt.pdf

9.4. Size:57K philips
php12n10e 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 14 APower Supplies (SMPS), motor Ptot Total power dissipation 7

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