PHP125N06LT MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP125N06LT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 250 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 75 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: SOT78
PHP125N06LT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP125N06LT Datasheet (PDF)
php125n06lt 4.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP125N06LT, PHB125N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 8 m (VGS = 5 V)g Low thermal resistance
php125n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHP125N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state
php125 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPHP125P-channel enhancement modeMOS transistor1997 Jun 18Product specificationSupersedes data of 1996 Apr 02File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement modePHP125MOS transistorFEATURES DESCRIPTION High-speed switching P-channel enhancement mode MOS transistor in an 8-p
php129nq04lt phb129nq04lt.pdf
PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
phb12nq15t phd12nq15t php12nq15t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP12NQ15T, PHB12NQ15T PHD12NQ15TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 12.5 AgRDS(ON) 200 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in
phb129nq04lt php129nq04lt.pdf
PHP/PHB129NQ04LTN-channel TrenchMOS logic level FETRev. 01 11 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC
php12n10e 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. The device is VDS Drain-source voltage 100 Vintended for use in Switched Mode ID Drain current (DC) 14 APower Supplies (SMPS), motor Ptot Total power dissipation 7
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