PH6030AL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH6030AL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 79 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 313 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: LFPAK

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PH6030AL datasheet

 ..1. Size:218K  philips
ph6030al.pdf pdf_icon

PH6030AL

PH6030AL N-channel TrenchMOS logic level FET Rev. 05 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

 ..2. Size:218K  nxp
ph6030al.pdf pdf_icon

PH6030AL

PH6030AL N-channel TrenchMOS logic level FET Rev. 05 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

 8.1. Size:156K  philips
ph6030l.pdf pdf_icon

PH6030AL

PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an

 8.2. Size:156K  nxp
ph6030l.pdf pdf_icon

PH6030AL

PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an

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