PH6030AL. Аналоги и основные параметры
Наименование производителя: PH6030AL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 79 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 43 ns
Cossⓘ - Выходная емкость: 313 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PH6030AL
- подборⓘ MOSFET транзистора по параметрам
PH6030AL даташит
ph6030al.pdf
PH6030AL N-channel TrenchMOS logic level FET Rev. 05 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due
ph6030al.pdf
PH6030AL N-channel TrenchMOS logic level FET Rev. 05 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due
ph6030l.pdf
PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an
ph6030l.pdf
PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an
Другие IGBT... PH4030AL, PH4330L, PH4530L, PH4830L, PH4840S, PH5030AL, PH5330E, PH5525L, 4435, PH6030L, PH6325L, PH7030AL, PH7030L, PH8030L, PH8230E, PH9025L, PH9030AL
History: PSMN015-100P
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