PH6030L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH6030L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 76.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 53 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: LFPAK

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PH6030L datasheet

 ..1. Size:156K  philips
 ph6030l.pdf pdf_icon

PH6030L

PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an

 ..2. Size:156K  nxp
 ph6030l.pdf pdf_icon

PH6030L

PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an

 8.1. Size:218K  philips
 ph6030al.pdf pdf_icon

PH6030L

PH6030AL N-channel TrenchMOS logic level FET Rev. 05 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

 8.2. Size:218K  nxp
 ph6030al.pdf pdf_icon

PH6030L

PH6030AL N-channel TrenchMOS logic level FET Rev. 05 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

MOSTRAR MÁS

Otros transistores... PH4330L, PH4530L, PH4830L, PH4840S, PH5030AL, PH5330E, PH5525L, PH6030AL, SPP20N60C3, PH6325L, PH7030AL, PH7030L, PH8030L, PH8230E, PH9025L, PH9030AL, PH9030L