PH6030L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PH6030L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 76.7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 53 ns
Cossⓘ - Выходная емкость: 460 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: LFPAK
PH6030L Datasheet (PDF)
ph6030l.pdf
PH6030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an
ph6030l.pdf
PH6030LN-channel TrenchMOS logic level FETRev. 01 29 July 2008 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching an
ph6030al.pdf
PH6030ALN-channel TrenchMOS logic level FETRev. 05 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph6030al.pdf
PH6030ALN-channel TrenchMOS logic level FETRev. 05 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918