QJD1210006 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QJD1210006

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 880 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: MODULE

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QJD1210006 datasheet

 ..1. Size:419K  powerex
 qjd1210006.pdf pdf_icon

QJD1210006

QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap

 5.1. Size:419K  powerex
 qjd1210007.pdf pdf_icon

QJD1210006

QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap

 6.1. Size:478K  powerex
 qjd1210011.pdf pdf_icon

QJD1210006

QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo

 6.2. Size:477K  powerex
 qjd1210010.pdf pdf_icon

QJD1210006

QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo

MOSTRAR MÁS

Otros transistores... PJ2301, PJ2306, PJ4N3KDW, QH8KA1, QH8KA2, QH8MA2, QH8MA3, QH8MA4, 20N50, QJD1210007, QJD1210010, QJD1210011, QM0004D, QM0004G, QM0004P, QM0004S, QM0004U