All MOSFET. QJD1210006 Datasheet

 

QJD1210006 Datasheet and Replacement


   Type Designator: QJD1210006
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 1000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: MODULE
 

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QJD1210006 Datasheet (PDF)

 ..1. Size:419K  powerex
 qjd1210006.pdf pdf_icon

QJD1210006

QJD1210006 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

 5.1. Size:419K  powerex
 qjd1210007.pdf pdf_icon

QJD1210006

QJD1210007 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

 6.1. Size:478K  powerex
 qjd1210011.pdf pdf_icon

QJD1210006

QJD1210011 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

 6.2. Size:477K  powerex
 qjd1210010.pdf pdf_icon

QJD1210006

QJD1210010 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

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Datasheet: PJ2301 , PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , 2N60 , QJD1210007 , QJD1210010 , QJD1210011 , QM0004D , QM0004G , QM0004P , QM0004S , QM0004U .

History: SSM9980M | HGS130N12SL | IPD033N06N | AP83T02GJ-HF | STP80N6F6 | IRFH5206PBF | BSC042N03MS

Keywords - QJD1210006 MOSFET datasheet

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