PHP2N60E Todos los transistores

 ..1. Size:75K  philips
 php2n60e phb2n60e phd2n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan

 ..2. Size:76K  philips
 php2n60e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 A g Low thermal resistance RDS(ON) 6 s GENERAL DESCRIPTION N-chan

 7.1. Size:50K  philips
 php2n60 1.pdf

Philips Semiconductors Product specification -------------------------------------------------------------------------------------------------------------- PowerMOS transistor PHP2N60 ---------------------------------------------------------------------------------------------------------------------------------------------------------- GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel

 9.1. Size:57K  philips
 php2n40 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP2N40 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 2.5 A off-state characteristics, fast Ptot Total power dissipati

 9.2. Size:20K  philips
 php2n40e 1.pdf

Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 400 V avalanche energy capability, stable ID Drain current (DC) 2.5 A blocking voltage, fast switching and Ptot Total power d

 9.3. Size:74K  philips
 php2n50e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe

 9.4. Size:73K  philips
 php2n50e phb2n50e phd2n50e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 A g Low thermal resistance RDS(ON) 5 s GENERAL DESCRIPTION N-channe

 9.5. Size:56K  philips
 php2n50 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 2 A off-state characteristics, fast Ptot Total power dissipation