PHP2N60E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHP2N60E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Id|ⓘ - Corriente continua de drenaje: 1.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: SOT78

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PHP2N60E Datasheet (PDF)

..1. Size:75K philips
php2n60e phb2n60e phd2n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan

..2. Size:76K philips
php2n60e 3.pdf

7.1. Size:50K philips
php2n60 1.pdf

Philips Semiconductors Product specification-------------------------------------------------------------------------------------------------------------- PowerMOS transistor PHP2N60 ----------------------------------------------------------------------------------------------------------------------------------------------------------GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel

9.1. Size:57K philips
php2n40 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP2N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.5 Aoff-state characteristics, fast Ptot Total power dissipati

9.2. Size:20K philips
php2n40e 1.pdf

Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.5 Ablocking voltage, fast switching and Ptot Total power d

9.3. Size:74K philips
php2n50e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe

9.4. Size:73K philips
php2n50e phb2n50e phd2n50e.pdf

9.5. Size:56K philips
php2n50 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP2N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2 Aoff-state characteristics, fast Ptot Total power dissipation

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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