PHP2N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PHP2N60E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
Тип корпуса: SOT78
PHP2N60E Datasheet (PDF)
php2n60e phb2n60e phd2n60e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan
php2n60e 3.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan
php2n60 1.pdf
Philips Semiconductors Product specification-------------------------------------------------------------------------------------------------------------- PowerMOS transistor PHP2N60 ----------------------------------------------------------------------------------------------------------------------------------------------------------GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel
php2n40 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP2N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.5 Aoff-state characteristics, fast Ptot Total power dissipati
php2n40e 1.pdf
Philips Semiconductors Objective specification PowerMOS transistor PHP2N40E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 2.5 Ablocking voltage, fast switching and Ptot Total power d
php2n50e 3.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe
php2n50e phb2n50e phd2n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe
php2n50 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP2N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2 Aoff-state characteristics, fast Ptot Total power dissipation
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918