PHP3055L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHP3055L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: SOT78

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PHP3055L Datasheet (PDF)

..1. Size:51K philips
php3055l 2.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switch

7.1. Size:105K philips
phd3055e php3055e 4.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switchingID = 10.3 AgRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

7.2. Size:317K philips
php3055e phd3055e.pdf

PHP/PHD3055ETrenchMOS standard level FETRev. 06 25 March 2002 Product data1. DescriptionN-channel standard level field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP3055E in SOT78 (TO-220AB)PHD3055E in SOT428 (D-PAK).2. Features Fast switching Low on-state resistance.3. Applications DC to DC converters Switc

7.3. Size:52K philips
php3055e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switching and Ptot Total power dissi

7.4. Size:75K philips
phb3055e phd3055e php3055e 3.pdf

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055EFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistancegRDS(ON) 150 m (VGS = 10 V)sGENERAL DESCRIPTIONN-channel enhance

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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