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PHP3055L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP3055L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: SOT78

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PHP3055L Datasheet (PDF)

1.1. php3055l 2.pdf Size:51K _philips2

PHP3055L
PHP3055L

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching

3.1. php3055e 1.pdf Size:52K _philips2

PHP3055L
PHP3055L

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching and Ptot Total power dissipat

3.2. phb3055e phd3055e php3055e 3.pdf Size:75K _philips2

PHP3055L
PHP3055L

Philips Semiconductors Preliminary specification TrenchMOS? transistor PHP3055E, PHB3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistance g RDS(ON) ? 150 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect

3.3. php3055e phd3055e.pdf Size:317K _philips2

PHP3055L
PHP3055L

PHP/PHD3055E TrenchMOS standard level FET Rev. 06 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS1 technology. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance. 3. Applications DC to DC converters Switch mode po

3.4. phd3055e php3055e 4.pdf Size:105K _philips2

PHP3055L
PHP3055L

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switching ID = 10.3 A g RDS(ON) ? 150 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using trench technology. Ap

Otros transistores... PHP125N06LT , PHP12N10E , PHP130N03LT , PHP18N20E , PHP21N06LT , PHP2N50E , PHP2N60E , PHP3055E , IRFBC40 , PHP33N10 , PHP37N06LT , PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , PHP44N06LT , PHP4N60E .

 


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