PHP3055L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP3055L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SOT78

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PHP3055L datasheet

 ..1. Size:51K  philips
php3055l 2.pdf pdf_icon

PHP3055L

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch

 7.1. Size:105K  philips
phd3055e php3055e 4.pdf pdf_icon

PHP3055L

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switching ID = 10.3 A g RDS(ON) 150 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using tr

 7.2. Size:317K  philips
php3055e phd3055e.pdf pdf_icon

PHP3055L

PHP/PHD3055E TrenchMOS standard level FET Rev. 06 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance. 3. Applications DC to DC converters Switc

 7.3. Size:52K  philips
php3055e 1.pdf pdf_icon

PHP3055L

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching and Ptot Total power dissi

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