PHP3055L PDF and Equivalents Search

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch... See More ⇒

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switching ID = 10.3 A g RDS(ON) 150 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using tr... See More ⇒

PHP/PHD3055E TrenchMOS standard level FET Rev. 06 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance. 3. Applications DC to DC converters Switc... See More ⇒

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching and Ptot Total power dissi... See More ⇒

Philips Semiconductors Preliminary specification TrenchMOS transistor PHP3055E, PHB3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 55 V Fast switching High thermal cycling performance ID = 10.5 A Low thermal resistance g RDS(ON) 150 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhance... See More ⇒