PHP3055L Datasheet. Specs and Replacement

Type Designator: PHP3055L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT78

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PHP3055L datasheet

 ..1. Size:51K  philips
 php3055l 2.pdf pdf_icon

PHP3055L

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch... See More ⇒

 7.1. Size:105K  philips
 phd3055e php3055e 4.pdf pdf_icon

PHP3055L

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP3055E, PHD3055E FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 55 V Fast switching ID = 10.3 A g RDS(ON) 150 m (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, field-effect power transistor in a plastic envelope using tr... See More ⇒

 7.2. Size:317K  philips
 php3055e phd3055e.pdf pdf_icon

PHP3055L

PHP/PHD3055E TrenchMOS standard level FET Rev. 06 25 March 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance. 3. Applications DC to DC converters Switc... See More ⇒

 7.3. Size:52K  philips
 php3055e 1.pdf pdf_icon

PHP3055L

Philips Semiconductors Product specification PowerMOS transistor PHP3055E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching and Ptot Total power dissi... See More ⇒

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Detailed specifications: PHP125N06LT, PHP12N10E, PHP130N03LT, PHP18N20E, PHP21N06LT, PHP2N50E, PHP2N60E, PHP3055E, K4145, PHP33N10, PHP37N06LT, PHP3N40E, PHP3N50E, PHP3N60E, PHP42N03LT, PHP44N06LT, PHP4N60E

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