PHP33N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHP33N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 175 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm

Encapsulados: SOT78

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PHP33N10 datasheet

 8.1. Size:84K  philips
php33nq20t phb33nq20t.pdf pdf_icon

PHP33N10

PHP/PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 01 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge. 1.3 Applications DC-to-DC

 8.2. Size:681K  nxp
php33nq20t.pdf pdf_icon

PHP33N10

PHP33NQ20T N-channel TrenchMOS standard level FET Rev. 02 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe

 8.3. Size:261K  inchange semiconductor
php33nq20t.pdf pdf_icon

PHP33N10

isc N-Channel MOSFET Transistor PHP33NQ20T FEATURES Drain Current I = 32.7A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =77m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

Otros transistores... PHP12N10E, PHP130N03LT, PHP18N20E, PHP21N06LT, PHP2N50E, PHP2N60E, PHP3055E, PHP3055L, STF13NM60N, PHP37N06LT, PHP3N40E, PHP3N50E, PHP3N60E, PHP42N03LT, PHP44N06LT, PHP4N60E, PHP4ND40E