PHP33N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP33N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 175 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Encapsulados: SOT78
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PHP33N10 datasheet
php33nq20t phb33nq20t.pdf
PHP/PHB33NQ20T N-channel TrenchMOS standard level FET Rev. 01 8 November 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge. 1.3 Applications DC-to-DC
php33nq20t.pdf
PHP33NQ20T N-channel TrenchMOS standard level FET Rev. 02 3 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fe
php33nq20t.pdf
isc N-Channel MOSFET Transistor PHP33NQ20T FEATURES Drain Current I = 32.7A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =77m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
Otros transistores... PHP12N10E, PHP130N03LT, PHP18N20E, PHP21N06LT, PHP2N50E, PHP2N60E, PHP3055E, PHP3055L, STF13NM60N, PHP37N06LT, PHP3N40E, PHP3N50E, PHP3N60E, PHP42N03LT, PHP44N06LT, PHP4N60E, PHP4ND40E
History: CSD17484F4
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