PHP33N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP33N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 175 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
Paquete / Cubierta: SOT78
Búsqueda de reemplazo de PHP33N10 MOSFET
PHP33N10 Datasheet (PDF)
php33nq20t phb33nq20t.pdf
PHP/PHB33NQ20TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC
php33nq20t.pdf
PHP33NQ20TN-channel TrenchMOS standard level FETRev. 02 3 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
php33nq20t.pdf
isc N-Channel MOSFET Transistor PHP33NQ20TFEATURESDrain Current I = 32.7A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =77m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Otros transistores... PHP12N10E , PHP130N03LT , PHP18N20E , PHP21N06LT , PHP2N50E , PHP2N60E , PHP3055E , PHP3055L , STF13NM60N , PHP37N06LT , PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E .
History: PHP3055E | NCEP40T15G | PHP2N60E
History: PHP3055E | NCEP40T15G | PHP2N60E
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