PHP33N10 - Даташиты. Аналоги. Основные параметры
Наименование производителя: PHP33N10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 175 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 34 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
Тип корпуса: SOT78
Аналог (замена) для PHP33N10
PHP33N10 Datasheet (PDF)
php33nq20t phb33nq20t.pdf

PHP/PHB33NQ20TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC
php33nq20t.pdf

PHP33NQ20TN-channel TrenchMOS standard level FETRev. 02 3 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe
php33nq20t.pdf

isc N-Channel MOSFET Transistor PHP33NQ20TFEATURESDrain Current I = 32.7A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =77m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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