QM2410G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QM2410G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm

Encapsulados: SOT-223

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QM2410G datasheet

 ..1. Size:330K  ubiq
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QM2410G

QM2410G N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1A for most of the small power switching and load switch applications. Applications The QM2410G meet the RoHS and Green Product requi

 8.1. Size:340K  ubiq
qm2410j.pdf pdf_icon

QM2410G

QM2410J N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1A for most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi

 8.2. Size:303K  ubiq
qm2410k.pdf pdf_icon

QM2410G

QM2410K N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.2A for most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir

 8.3. Size:337K  ubiq
qm2410d.pdf pdf_icon

QM2410G

QM2410D N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 22A for most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require

Otros transistores... QM2404K, QM2404V, QM2407K, QM2409G, QM2409J, QM2409K, QM2409V, QM2410D, 13N50, QM2410J, QM2410K, QM2410S, QM2410V, QM2411G, QM2411J, QM2411K, QM2411SN8