All MOSFET. QM2410G Datasheet

 

QM2410G MOSFET. Datasheet pdf. Equivalent

Type Designator: QM2410G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 5.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 8.5 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Package: SOT-223

QM2410G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QM2410G Datasheet (PDF)

0.1. qm2410g.pdf Size:330K _ubiq

QM2410G
QM2410G

 QM2410G N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37mΩ 5.1A for most of the small power switching and load switch applications. Applications The QM2410G meet the RoHS and Green Product requi

8.1. qm2410d.pdf Size:337K _ubiq

QM2410G
QM2410G

QM2410D N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25mΩ 22A for most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require

8.2. qm2410s.pdf Size:336K _ubiq

QM2410G
QM2410G

 QM2410S N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25mΩ 6.2A for most of the small power switching and load switch applications. Applications The QM2410S meet the RoHS and Green Product requi

 8.3. qm2410j.pdf Size:340K _ubiq

QM2410G
QM2410G

 QM2410J N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37mΩ 5.1A for most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi

8.4. qm2410k.pdf Size:303K _ubiq

QM2410G
QM2410G

QM2410K N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37mΩ 4.2A for most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir

 8.5. qm2410v.pdf Size:344K _ubiq

QM2410G
QM2410G

QM2410V N-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2410V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37mΩ 4.5A for most of the small power switching and load switch applications. Applications The QM2410V meet the RoHS and Green Product requir

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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