QM2411G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM2411G
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VQgⓘ - Carga de la puerta: 10.1 nC
trⓘ - Tiempo de subida: 32.2 nS
Cossⓘ - Capacitancia de salida: 82 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET QM2411G
QM2411G Datasheet (PDF)
qm2411g.pdf
QM2411G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req
qm2411j.pdf
QM2411J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6Afor most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req
qm2411k.pdf
QM2411K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3Afor most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir
qm2411sn8.pdf
QM2411SN8 P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2Acharge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc
qm2411v.pdf
QM2411V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918