QM2411G. Аналоги и основные параметры

Наименование производителя: QM2411G

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 32.2 ns

Cossⓘ - Выходная емкость: 82 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm

Тип корпуса: SOT-223

Аналог (замена) для QM2411G

- подборⓘ MOSFET транзистора по параметрам

 

QM2411G даташит

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QM2411G

QM2411G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req

 8.1. Size:349K  ubiq
qm2411j.pdfpdf_icon

QM2411G

QM2411J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req

 8.2. Size:311K  ubiq
qm2411k.pdfpdf_icon

QM2411G

QM2411K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3A for most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir

 8.3. Size:324K  ubiq
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QM2411G

QM2411SN8 P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411SN8 is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate -20V 80m -3.2A charge for most of the small power switching and load switch applications. Applications The QM2411SN8 meet the RoHS and Green Produc

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