QM2411V MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QM2411V

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32.2 nS

Cossⓘ - Capacitancia de salida: 82 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TSOP6

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QM2411V datasheet

 ..1. Size:352K  ubiq
 qm2411v.pdf pdf_icon

QM2411V

QM2411V P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2A for most of the small power switching and load switch applications. Applications The QM2411V meet the RoHS and Green Product requ

 8.1. Size:349K  ubiq
 qm2411j.pdf pdf_icon

QM2411V

QM2411J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411J meet the RoHS and Green Product req

 8.2. Size:311K  ubiq
 qm2411k.pdf pdf_icon

QM2411V

QM2411K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3A for most of the small power switching and load switch applications. Applications The QM2411K meet the RoHS and Green Product requir

 8.3. Size:338K  ubiq
 qm2411g.pdf pdf_icon

QM2411V

QM2411G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2411G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.6A for most of the small power switching and load switch applications. Applications The QM2411G meet the RoHS and Green Product req

MOSTRAR MÁS

Otros transistores... QM2410J, QM2410K, QM2410S, QM2410V, QM2411G, QM2411J, QM2411K, QM2411SN8, NCEP15T14, QM2413K, QM2413V, QM2414K, QM2414V, QM2415K, QM2415SM8, QM2415SN8, QM2416C1