PHP3N60E Todos los transistores

 ..1. Size:79K  philips
 php3n60e phb3n60e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 A g Low thermal resistance RDS(ON) 4.4 s GENERAL DESCRIPTION N-channel, enh

 9.1. Size:103K  philips
 php3n40e phb3n40e phd3n40e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

 9.2. Size:75K  philips
 php3n40e 3.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 A g Low thermal resistance RDS(ON) 3.5 s GENERAL DESCRIPTION N-ch

 9.3. Size:53K  philips
 php3n20l 2.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 200 V avalanche energy capability, stable ID Drain current (DC) 3.5 A blocking voltage, fast swit

 9.4. Size:52K  philips
 php3n50 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 3.4 A off-state characteristics, fast Ptot Total power dissipati

 9.5. Size:52K  philips
 php3n20e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP3N20E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 200 V avalanche energy capability, stable ID Drain current (DC) 3.5 A blocking voltage, fast switching and Ptot Total power dis

 9.6. Size:78K  philips
 php3n50e phb3n50e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 A g Low thermal resistance RDS(ON) 3 s GENERAL DESCRIPTION N-channel, enhan