PHP3N60E
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP3N60E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4
Ohm
Package:
SOT78
PHP3N60E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP3N60E
Datasheet (PDF)
..1. Size:79K philips
php3n60e phb3n60e.pdf 
Philips Semiconductors Product specification PowerMOS transistors PHP3N60E, PHB3N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 2.8 Ag Low thermal resistanceRDS(ON) 4.4 sGENERAL DESCRIPTIONN-channel, enh
9.1. Size:103K philips
php3n40e phb3n40e phd3n40e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch
9.2. Size:75K philips
php3n40e 3.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N40E, PHB3N40E, PHD3N40E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V Stable off-state characteristics High thermal cycling performance ID = 2.5 Ag Low thermal resistanceRDS(ON) 3.5 sGENERAL DESCRIPTIONN-ch
9.3. Size:53K philips
php3n20l 2.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 3.5 Ablocking voltage, fast swit
9.4. Size:52K philips
php3n50 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP3N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 3.4 Aoff-state characteristics, fast Ptot Total power dissipati
9.5. Size:52K philips
php3n20e 1.pdf
Philips Semiconductors Product specification PowerMOS transistor PHP3N20E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 200 Vavalanche energy capability, stable ID Drain current (DC) 3.5 Ablocking voltage, fast switching and Ptot Total power dis
9.6. Size:78K philips
php3n50e phb3n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 3.4 Ag Low thermal resistanceRDS(ON) 3 sGENERAL DESCRIPTIONN-channel, enhan
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